dsg552n9d
11.04.2011, 02:46
Zinc oxide: ZnO has become a candidate for GaN epitaxial substrate,light signs (http://www.advertiseall.com/), because both have very striking similarities. Both the same crystal structure, lattice identify the degree is very small, close to the band gap (the band discontinuity is small and exposure to small barrier). However, ZnO as the Achilles heel of GaN epitaxial GaN epitaxial growth in an atmosphere of temperature and easily decomposed,display boards (http://www.advertiseall.com/), and corrosion.
Currently, ZnO semiconductor material used to make optoelectronic devices still can not, or high-temperature electronic devices, mainly the material fails to reach the device level and P-type doping problem is not a real solution for the growth of ZnO-based semiconductor equipment had not been developed.
Sapphire: The most commonly used for GaN growth substrate is Al2O3. The advantage is chemical stability, does not absorb visible light, affordable, manufacturing technology is relatively mature. Although poor thermal conductivity of the device is not exposed to the work of a small current is obviously insufficient, but in the power-type device under high current job problems are acute.
ilicon carbide: SiC as a substrate material second only to the extent of the application of sapphire,coffee neon sign (http://www.advertiseall.com/), there is no third GaNLED substrate for commercial production. SiC substrates have good chemical stability, good conductivity, thermal conductivity, and do not absorb visible light, etc., but also less prominent, such as the price is too high, the crystal quality Al2O3 and Si so difficult to achieve good machining performance is rather poor, In addition, SiC substrates absorb ultraviolet light below 380 nm, 380 nm is not suitable for development under UV LED. SiC substrate useful as conductivity and thermal conductivity, can solve the power type GaNLED heat dissipation devices, it is in the field of semiconductor lighting technology an important role. Compared with sapphire, SiC and GaN epitaxial film lattice matching is improved. In addition,LED neon sign (http://www.advertiseall.com/), SiC has a blue light-emitting properties, and low resistivity materials, can be produced
Currently, ZnO semiconductor material used to make optoelectronic devices still can not, or high-temperature electronic devices, mainly the material fails to reach the device level and P-type doping problem is not a real solution for the growth of ZnO-based semiconductor equipment had not been developed.
Sapphire: The most commonly used for GaN growth substrate is Al2O3. The advantage is chemical stability, does not absorb visible light, affordable, manufacturing technology is relatively mature. Although poor thermal conductivity of the device is not exposed to the work of a small current is obviously insufficient, but in the power-type device under high current job problems are acute.
ilicon carbide: SiC as a substrate material second only to the extent of the application of sapphire,coffee neon sign (http://www.advertiseall.com/), there is no third GaNLED substrate for commercial production. SiC substrates have good chemical stability, good conductivity, thermal conductivity, and do not absorb visible light, etc., but also less prominent, such as the price is too high, the crystal quality Al2O3 and Si so difficult to achieve good machining performance is rather poor, In addition, SiC substrates absorb ultraviolet light below 380 nm, 380 nm is not suitable for development under UV LED. SiC substrate useful as conductivity and thermal conductivity, can solve the power type GaNLED heat dissipation devices, it is in the field of semiconductor lighting technology an important role. Compared with sapphire, SiC and GaN epitaxial film lattice matching is improved. In addition,LED neon sign (http://www.advertiseall.com/), SiC has a blue light-emitting properties, and low resistivity materials, can be produced